| 摘要 |
PURPOSE:To provide an LC element, a semiconductor device and a manufacturing method of the LC element wherein manufacturing is easy, an assembly operation of parts in a following process can be omitted, formation as a part of an IC and an LSI is possible an characteristic can be changed arbitrarily as required by changing a capacitor existing like a distribution constant. CONSTITUTION:An LC element 100 includes a meandering n<+> region 22 formed in an area near a surface of a p-Si substrate 24 and a meandering p<+> region 20 formed in a part thereof, and a p-n junction layer 26 is formed thereof. Furthermore, first and second electrodes 10, 12 are formed in a surface of the p-n junction layer 26. Each of the two electrodes functions as an inductor and a capacitor is formed like a distribution constant by using the p-n junction layer 26 by a reverse bias. Good damping characteristic can be acquired in this way. |
