| 摘要 |
A nonvolatile semiconductor memory comprises a memory cell region including a number of memory cells formed therein and each having a floating gate and a control gate formed above the floating gate, a plurality of word lines extending in a first direction in parallel to each other, separately from each other, and a selection transistor region positioned adjacent to the memory cell region and including one selection transistor formed therein and a selection signal line extending in parallel to the word lines. The selection signal line is formed on an inactive region in a substrate to extend in parallel to a boundary line between the memory cell region and the selection transistor region.
|
