| 摘要 |
A fast switching, self-oscillating circuit 22 comprises a conventional transistor 10. A voltage Vcc is applied to the transistor to drive a collector emitter voltage beyond a maximum rated value for the collector-emitter voltage, to cause a reverse current Ccb to flow through the collector base junction region. The reverse current is utilized to forward bias the base emitter junction region 20, thereby to cause breakover switching on of the transistor. |
