发明名称 |
Contact forming method for semiconductor device |
摘要 |
A contact forming method of a semiconductor device is disclosed, in which a pad polysilicon layer is formed at an active region of a cell array, thereafter an upper portion of a gate is opened when a spacer of a NMOS transistor region is formed. And at the same time a gate capping insulating layer of the cell array region, the active region of the NMOS transistor and the gate node contact region remains at a predetermined thickness by etching the spacer. And then, by performing an ion implantation procedure on the entire surface, the direct pad polysilicon layer and the buried pad polysilicon layer are simultaneously ion-implanted.
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申请公布号 |
US2002068423(A1) |
申请公布日期 |
2002.06.06 |
申请号 |
US20010971778 |
申请日期 |
2001.10.04 |
申请人 |
PARK YOUNG-HOON;LEE JIN-HUN;HAN MYOUNG-HEE;BAN HYO-DONG;MIN EUN-YOUNG;JANG WON-HEE |
发明人 |
PARK YOUNG-HOON;LEE JIN-HUN;HAN MYOUNG-HEE;BAN HYO-DONG;MIN EUN-YOUNG;JANG WON-HEE |
分类号 |
H01L21/768;H01L21/8234;H01L21/8242;(IPC1-7):H01L21/320;H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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主权项 |
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地址 |
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