发明名称 |
METHOD OF REDUCING JUNCTION CAPACITANCE |
摘要 |
A method of reducing junction capacitance. In a doped substrate or well, a super steep counter-doped implantation is performed, so as to form a super steep counter-doped region beneath the source/drain region in the substrate. As a consequence, the region near the source/drain region has a reduced doping concentration, and the junction capacitance of the source/drain region is reduced.
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申请公布号 |
US2002068409(A1) |
申请公布日期 |
2002.06.06 |
申请号 |
US19990243188 |
申请日期 |
1999.02.02 |
申请人 |
CHOU JIH-WEN;CHENG YAO-CHIN;LIAO F. S. |
发明人 |
CHOU JIH-WEN;CHENG YAO-CHIN;LIAO F. S. |
分类号 |
H01L21/8238;H01L29/10;(IPC1-7):H01L21/823;H01L21/336 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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