发明名称 METHOD OF REDUCING JUNCTION CAPACITANCE
摘要 A method of reducing junction capacitance. In a doped substrate or well, a super steep counter-doped implantation is performed, so as to form a super steep counter-doped region beneath the source/drain region in the substrate. As a consequence, the region near the source/drain region has a reduced doping concentration, and the junction capacitance of the source/drain region is reduced.
申请公布号 US2002068409(A1) 申请公布日期 2002.06.06
申请号 US19990243188 申请日期 1999.02.02
申请人 CHOU JIH-WEN;CHENG YAO-CHIN;LIAO F. S. 发明人 CHOU JIH-WEN;CHENG YAO-CHIN;LIAO F. S.
分类号 H01L21/8238;H01L29/10;(IPC1-7):H01L21/823;H01L21/336 主分类号 H01L21/8238
代理机构 代理人
主权项
地址