Rapid chemical vapor deposition for spherical semiconductor processing

摘要

An apparatus and method for depositing thin films on the surface of a device such as a spherical shaped devices is disclosed. The apparatus includes an enclosure containing a plurality of apertures. The apertures connect to conduits for inputting and outputting the devices as well as injecting and releasing different gases and/or processing constituents. A chamber is formed within the enclosure. Spherical shaped devices move through the input conduit where they are preheated by a furnace. The preheated devices then move into the chamber where chemical precursors are added. At this time, the gases and/or processing constituents react with the heated device thereby growing a thin film on its outer surface.