ENTWURF FÜR HOCHFREQUENTE LEISTUNGSTRANSISTOREN

摘要

A layout is provided for RF power transistors that reduces common lead inductance and its associated performance penalties. An RF transistor cell is rotated 90 DEG with respect to a conventional RF transistor cell so as to located bond pads nearer the edge of a silicon die, reducing bond wire length and common lead inductance and thereby improving performance at high frequencies. The placement of bond pad and distribution of different parts of the transistor layout further reduces common lead inductance.