| 摘要 |
<p>Disclosed is a fabrication method of a selectively oxidized porous silicon layer that includes the steps of: forming a defined photoresist pattern on a P-type silicon substrate; doping an N-type impurity in the silicon substrate by ion implantation using the photoresist pattern as a mask; removing the photoresist pattern; anodizing the silicon substrate to selectively form a porous silicon layer on the surface of the silicon substrate other than at the N-type impurity-doped region; and oxidizing the porous silicon layer into an oxidized porous silicon layer, thereby providing the selectively oxidized porous silicon layer of high quality, precisely formed and without damage, by ion implantation.</p> |
