A method for manufacturing a semiconductor wafer comprising a heat treatment which can suppress the generation of slip dislocation even under a heat treatment with an RTA apparatus. A method for manufacturing a semiconductor wafer having the step of heat-treating the semiconductor wafer at a predetermined temperature with an RTA apparatus comprises a heat treatment in such a condition that the temperature is so controlled that the temperature of the semiconductor wafer at least at a contact with a support jig which supports at least the semiconductor wafer may be below the temperature at the center by 3-20 DEG C.
