Mask for electron beam projection lithography and method of fabricating the same

摘要

In an electron beam projection lithography mask comprising a first silicon substrate (23) on which a transfer pattern is formed and a second silicon substrate (21) of a pillar side which is stuck on the first silicon substrate (23), slits (25) are formed in the first silicon substrate (23) positioned on pillar areas (21a) of the second silicon substrate (21).