| 摘要 |
<p>A high-frequency amplifier, wherein, using an emitter-earthed bipolar transistor, the DC bias of the bipolar transistor to a base terminal is applied by switching a constant current source and a constant voltage source according to the power level of the high-frequency signals input into or output from the bipolar transistor; and a high-frequency mixer, wherein, using such a structure that the DC bias is applied to the base of the bipolar transistor for amplification of the high-frequency amplifier, the DC bias is applied to the base of at least one of the bipolar transistors for inputting high-frequency signal and local oscillating wave.</p> |
