发明名称 |
Thin film transistor having lightly doped regions |
摘要 |
By appropriately selecting the structure of top gate type or staggered type TFTs disposed in the respective circuits of a semiconductor device depending on the function of the circuits, the operating characteristics and the reliability of the semiconductor device is improved. An LDD region (107) the whole of which overlaps a gate electrode is provided in a first n-channel type TFT of a controlling circuit. LDD regions (111) and (112) at least part of which overlaps a gate electrode are provided in a second n-channel type TFT of the control circuit. LDD regions (117) to (120) which do not overlap a gate electrode through offset regions are provided in an n-channel type TFT of a pixel matrix circuit. By making different the concentration of LDD regions of the control circuit and the concentration of the pixel matrix circuit, optimized circuit operation is obtained.
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申请公布号 |
US6399988(B1) |
申请公布日期 |
2002.06.04 |
申请号 |
US20000533040 |
申请日期 |
2000.03.22 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI |
分类号 |
G02F1/1362;H01L21/316;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/32;H01L29/786;(IPC1-7):H01L21/331 |
主分类号 |
G02F1/1362 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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