| 摘要 |
A magnetic memory unit includes at least one magnetic resistor, whose magnetized direction represent bit information stored in the magnetic memory unit, at least one read line, a current source for providing the magnetic resistor a bias current to produce an output voltage, and a sensing circuit for sensing the output voltage. The sensing circuit includes several components and has a symmetrical structure, so as to avoid defects while sensing the bit information stored in the magnetic memory unit.
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