METAL LAYER DEPOSITING APPARATUS FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: A metal layer depositing apparatus for a semiconductor device is provided to be capable of compensating the decrease of the depositing volume of a metal layer at a related portion of a wafer by using a plurality of magnetic substances. CONSTITUTION: A metal layer depositing apparatus for a semiconductor device is provided with a process chamber(10), a target holder(11) installed in the process chamber for holding a series of metal targets, a wafer heater(14) installed opposite to the target holder(11) for supporting a process object wafer(5), and a plurality of magnetic substances(19) attached on the predetermined portion of the wafer heater(14) corresponding to the related portion of the process object wafer(5) for inducing the improvement of the plasma collecting characteristic of the related portion.