| 摘要 |
The present invention provides a method for fabricating a DRAM cell having a trench capacitor. In order to simplify the fabrication method for a DRAM cell, to ensure a high yield and to achieve a high packing density of the DRAM cells, the invention proposes that the storage capacitor (4) of the DRAM cell and the selection transistor (3) be fabricated independently of one another. This saves method steps which, in the prior art, have to be carried out in order to isolate capacitor (9) and gate (16) in the same trench.
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