发明名称 |
Method of silicide formation by silicon pretreatment |
摘要 |
Various methods of fabricating a silicide film and structures incorporating the same are provided. In one aspect, a method of fabricating a silicide film is provided that includes providing a silicon surface and etching the silicon surface at between isotropic and anisotropic etching conditions to define a plurality of oblique surfaces thereon and thereby increase the surface area of the silicon surface. A silicide-forming material is deposited on the plurality of oblique surfaces and the silicon surface is heated to react the silicide-forming material therewith and form silicide. The roughing of the silicon surface facilitates metal-silicide reactions.
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申请公布号 |
US6399493(B1) |
申请公布日期 |
2002.06.04 |
申请号 |
US20010860141 |
申请日期 |
2001.05.17 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
DAWSON ROBERT;CHEEK JON D.;PELLERIN JOHN G. |
分类号 |
H01L21/285;H01L21/336;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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