发明名称 |
Method of producing a II-VI semiconductor component containing selenium and/or sulrfur |
摘要 |
A II-VI semiconductor component is produced with an active layer sequence having at least one II-VI semiconductor layer containing Se and/or S on a substrate. First, an Se-free II-VI interlayer based on BeTe is grown epitaxially on the substrate in an essentially Se-free and S-free first epitaxy chamber. The active layer sequence is then grown epitaxially on the Se-free II-VI semiconductor layer.
|
申请公布号 |
US6399473(B1) |
申请公布日期 |
2002.06.04 |
申请号 |
US20000480758 |
申请日期 |
2000.01.10 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH & CO. OHG |
发明人 |
FISCHER FRANK;KELLER MATTHIAS;LITZ THOMAS;LANDWEHR GOTTFRIED;LUGAUER HANS-JUERGEN;WAAG ANDREAS;KEIM MARKUS |
分类号 |
H01L33/00;H01L21/36;H01L21/363;H01L21/365;H01S5/327;(IPC1-7):H01L21/28;H01L21/320 |
主分类号 |
H01L33/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|