发明名称 MASK FOR DEFINING ACTIVE REGION OF SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SRAM USING THE SAME
摘要 PURPOSE: An active region definition mask is provided to improve a gap filling margin in STI(Shallow Trench Isolation) by forming subsidence parts. CONSTITUTION: An active region definition mask(30) comprises a transparent mask substrate(300), a plurality of first active pattern(310), and a plurality of second active pattern(320). The second active pattern(320) further includes horizontal line pattern having a defined width, vertical line pattern having another defined width, edge parts(340), first subsidence parts(350) formed by the horizontal line pattern having a reduced width and the vertical line pattern having another reduced width in the edge parts(340), and second subsidence parts(360) formed by the vertical line pattern having a reduced width in the center portion.
申请公布号 KR20020041583(A) 申请公布日期 2002.06.03
申请号 KR20000071241 申请日期 2000.11.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, DAE YEOP
分类号 H01L27/11;(IPC1-7):H01L27/11 主分类号 H01L27/11
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