| 摘要 |
PURPOSE: To easily manufacture a semiconductor substrate which can securely be reduced in the parasitic capacitance when elements are provided. CONSTITUTION: This method includes a stage where resist 3 is patterned on a first semiconductor substrate 1 having a first silicon oxide film 2 formed on its top surface; a stage where the first silicon substrate has the first silicon oxide film 2 processed by isotropic or anisotropic etching using the resist 3 as a mask, and then the first silicon substrate 1 is further processed by isotropic etching using the resist 3 as a mask to make the surface of the first silicon substrate 1 uneven; and a stage where the resist 3 and first silicon oxide film 2 are removed, and then a second silicon substrate having a second silicon oxide film formed is stack on the top surface of the first silicon substrate 1 to form cavity areas inside by the unevenness of the surface of the first silicon substrate 1.
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