| 摘要 |
PURPOSE: An apparatus for manufacturing a single crystal ingot is provided to reduce generation of growing defects by reducing a vertical temperature slope difference between central part and outer circumferential part of a grown single crystal ingot, and improve a growing speed of the single crystal ingot by increasing an average vertical temperature slope of the growing interface of the single crystal ingot. CONSTITUTION: The apparatus for manufacturing a single crystal ingot comprises a chamber, a quartz crucible(53) which is installed inside the chamber and contains a silicon melt(55) for growing the single crystal ingot(69) having a certain diameter, a crucible support(57) which covers the quartz crucible(53) and is fixed onto a rotation shaft, a cylindrical heater encircling the crucible support(57), a thermal insulation barrel which envelopes the heater so as to prevent heat emitted from the heater from being diffused to the wall side of the chamber, a cylindrical first shielding part(77) which is installed between the single crystal ingot(69) and the crucible(53), a flange shaped second shielding part which is connected to the upper part of the first shielding part and fixed onto the thermal insulation barrel, and a third shielding part(81) which is connected to the lower part of the first shielding part(77) and projected toward the single crystal ingot(69), wherein the third shielding part(81) further comprises a first surface(85) facing the single crystal ingot(69) and the silicon melt(55) and having a horizontal corresponding distance(W1) and a first radius of curvature(R1), a second surface facing the heater opposite to the single crystal ingot and the silicon melt and having a horizontal corresponding distance(W2) and a first radius of curvature(R2), a third surface(89) opposing the outer circumferential surface of the single crystal ingot, and a fourth surface(91) facing the upper part of the chamber and having a third radius of curvature(R3). |
