METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A fabrication method of semiconductor devices is provided to reduce a resistivity of a gate by preventing oxidation of the gate and remaining a polysilicon on the gate. CONSTITUTION: A plurality of gates(37) staked sequentially a gate oxide, a first polysilicon layer(33), a tungsten film(34), a silicon nitride(35) and a cap oxide(36) are formed on a semiconductor substrate(31) having a cell and a peripheral region. An insulating spacer(39) is formed at both sidewalls of the stacked gates(37). After depositing a second polysilicon layer on the resultant structure, the second polysilicon layer formed on the cell region is then partially removed. The surface of the gates(37) of the cell region is exposed by CMP(Chemical Mechanical Polishing). A masking layer(42a) is formed on the cell region. The second polysilicon layer of the peripheral region is then removed by using the masking layer(42a) as a mask.