| 摘要 |
PURPOSE: To provide a method for etching a ruthenium film, which can surely remove ruthenium layered or deposited particularly on a periphery, a back side, and the other part, of a substrate other than the circuit formed part. CONSTITUTION: This method comprises etching a ruthenium film formed on a base plate with a chemical solution having pH of 12 or more and an oxidation reduction potential of 300 mVvsSHE.
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