发明名称 |
Low substrate-noise electrostatic discharge protection circuits with bi-directional silicon diodes |
摘要 |
An integrated circuit device that includes a plurality of electrostatic discharge clamp circuits, variously coupled to VDD, VSS and transistor, having at least one bi-directional silicon diode that includes a first silicon diode and a second silicon diode, wherein an n-type portion of the first silicon diode is coupled to a p-type portion of the second silicon diode and a p-type portion of the first silicon diode is coupled to an n-type portion of the second silicon diode, responsive to either a positive electrostatic discharge or a negative electrostatic discharge to provide electrostatic discharge protection.
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申请公布号 |
US2002064007(A1) |
申请公布日期 |
2002.05.30 |
申请号 |
US20010973745 |
申请日期 |
2001.10.11 |
申请人 |
CHANG CHYH-YIH;KER MING-DOU |
发明人 |
CHANG CHYH-YIH;KER MING-DOU |
分类号 |
H01L23/60;H01L27/02;H01L27/04;H01L29/747;H01L29/861;(IPC1-7):H02H9/00 |
主分类号 |
H01L23/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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