发明名称 |
Etching of hard masks |
摘要 |
Lines are fabricated by patterning a hard mask to provide a line segment, the line segment having a first dimension measured across the line segment; reacting a surface layer of the line segment to form a layer of a reaction product on a remaining portion of the line segment; and removing the reaction product without attacking the remaining portion of the line segment and without attacking the substrate to form the line segment with a dimension across the line segment that is smaller than the first dimension.
|
申请公布号 |
US2002063110(A1) |
申请公布日期 |
2002.05.30 |
申请号 |
US20000727139 |
申请日期 |
2000.11.30 |
申请人 |
CANTELL MARC W.;NATZLE WESLEY;RUEGSEGGER STEVEN M. |
发明人 |
CANTELL MARC W.;NATZLE WESLEY;RUEGSEGGER STEVEN M. |
分类号 |
H01L21/28;H01L21/3213;(IPC1-7):C23F1/00 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|