发明名称 Etching of hard masks
摘要 Lines are fabricated by patterning a hard mask to provide a line segment, the line segment having a first dimension measured across the line segment; reacting a surface layer of the line segment to form a layer of a reaction product on a remaining portion of the line segment; and removing the reaction product without attacking the remaining portion of the line segment and without attacking the substrate to form the line segment with a dimension across the line segment that is smaller than the first dimension.
申请公布号 US2002063110(A1) 申请公布日期 2002.05.30
申请号 US20000727139 申请日期 2000.11.30
申请人 CANTELL MARC W.;NATZLE WESLEY;RUEGSEGGER STEVEN M. 发明人 CANTELL MARC W.;NATZLE WESLEY;RUEGSEGGER STEVEN M.
分类号 H01L21/28;H01L21/3213;(IPC1-7):C23F1/00 主分类号 H01L21/28
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