发明名称 |
ELECTRICAL DEFECT DETECTING APPARATUS OF SEMICONDUCTOR DEVICE AND METHOD FOR DETECTING ELECTRICAL DEFECT OF SEMICONDUCTOR DEVICE USING THE SAME |
摘要 |
PURPOSE: An electrical defect detecting apparatus of a semiconductor device, and method for detecting electrical defect of a semiconductor device using the same are provided to examine an electrical defect by performing an examination without physical destruction. CONSTITUTION: An electrical defect detecting apparatus comprises a sub-chamber(13) loaded with a substrate by a handler part(11), a main chamber(15), a vacuum control unit(16) connected to the main chamber(15) and the sub-chamber(13), a pattern alignment unit(35) roughly performing an alignment according to an image stored in a memory after recognizing a pattern image on the substrate using an optical unit(32), an electron-beam source unit(19) scanning a primary electron-beam so as to detect an electrical defect on the substrate in the main chamber(15), a signal processing unit(21) amplifying an electrical signal of voltage contrast of second electrons generated on the substrate due to the primary electron beam, and an ion generation unit(17) capable of previously doping holes or electrons on the surface of the substrate in the sub-chamber(13).
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申请公布号 |
KR20020040092(A) |
申请公布日期 |
2002.05.30 |
申请号 |
KR20000070009 |
申请日期 |
2000.11.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG, HYO CHEON;KIM, DEOK YONG;KIM, YANG HYEONG |
分类号 |
G01N23/225;G01R31/302;G01R31/307;H01J37/26;H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
G01N23/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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