发明名称 METHOD FOR TREATING SUBSTRATES FOR MICROELECTRONICS
摘要 The invention relates to a method for treating substrates ( 50 ) for microelectronics or optoelectronics, whereby said substrates comprise a useful layer ( 52 ) on at least one of the surfaces thereof. The inventive method includes a mechanical/chemical polishing step occurring on a bare surface ( 54 ) of the useful layer and is characterized in that it also comprises a post-curing step in a reductive atmosphere ( 100 ) before said polishing step occurs.
申请公布号 EP1208589(A1) 申请公布日期 2002.05.29
申请号 EP20000958696 申请日期 2000.08.17
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 BARGE, THIERRY;AUBERTON-HERVE, ANDRE;AGA, HIROJI;TATE, NAOTO
分类号 H01L21/02;H01L21/26;H01L21/304;H01L21/306;H01L21/324;H01L21/762;H01L27/12 主分类号 H01L21/02
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