Metallized structure used for an optoelectronic integrated circuit having photo diodes comprises a titanium layer on a preexisting layer, and an aluminum layer on the titanium layer

摘要

Metallized structure comprises a titanium layer on a preexisting layer, and an aluminum layer on the titanium layer. The titanium layer is partially alloyed with the aluminum layer. An Independent claim is also included for a process for the production of the metallized structure comprising applying the titanium layer to a preexisting layer of an integrated circuit; applying an aluminum layer to the titanium layer; and heating to promote the partial alloying of the two layers. Preferred Features: The titanium layer is completely alloyed with the aluminum layer. The titanium layer has a thickness of not more than 200 angstroms, A further titanium nitride layer is applied to the aluminum layer.