| 发明名称 |
METHOD OF MANUFACTURING OXIDE FERROELECTRIC ELEMENTS |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel method of manufacturing an oxide ferroelectric elements for constituting a nonvolatile memory. SOLUTION: After forming an amorphous ferroelectric oxide precursor on a specified substrate, the precursor is irradiated with UV rays to crystallize while heating the precursor preferably at 500-600 deg.C, thereby manufacturing a desired crystallized ferroelectric oxide.
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| 申请公布号 |
JP2002151503(A) |
申请公布日期 |
2002.05.24 |
| 申请号 |
JP20000340845 |
申请日期 |
2000.11.08 |
| 申请人 |
UNIV WASEDA;KOREA UNIV;KOREA INST OF SCINENCE & TECHNOLOGY |
发明人 |
OKI YOSHIMICHI;SETSU KOSHU;HIRAMATSU HIRONAO;ITO TAKATOSHI;IN-FUUN CHOI;YON-TEE KIM |
| 分类号 |
H01L21/316;H01L21/8246;H01L27/105;(IPC1-7):H01L21/316 |
主分类号 |
H01L21/316 |
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