发明名称 SEMICONDUCTOR LASER AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To inhibit the biasing of light output distribution even if an angle on the inclination surface of a ridge section differs. SOLUTION: The semiconductor laser 1 comprises a first clad layer 10, an active layer 30 formed on the first clad layer 1, and a second clad layer 40 that is formed on the active layer 30 and has a ridge section. The length of an inclined plane G at the ridge section in the second clad layer 40 differs from that of an inclined plane S.
申请公布号 JP2002151790(A) 申请公布日期 2002.05.24
申请号 JP20000349200 申请日期 2000.11.16
申请人 SONY CORP 发明人 IJUIN SEIJI
分类号 H01S5/223;(IPC1-7):H01S5/223 主分类号 H01S5/223
代理机构 代理人
主权项
地址