| 摘要 |
PROBLEM TO BE SOLVED: To provide a high output and high efficiency nitride semiconductor element having good crystallinity, more specifically a laser element oscillating continuously with a low threshold current and a high efficiency LED element. SOLUTION: A first layer of nitride semiconductor not doped or lightly doped with n impurities is formed on a substrate, a second layer of nitride semiconductor doped more heavily with n impurities than the first layer is formed on the first layer and a negative electrode is formed on the second layer. In such a nitride semiconductor element, at least one of the first layer or the second layer comprises a strain superlattice layer where nitride semiconductor layers of 100 Å or less having different compositions are laid in layer. Since a second layer having good crystallinity and a high carrier density can be formed, ohmic contact with the negative electrode is improved and efficiency of the element is enhanced. |
