发明名称 PLASMA DEPOSITION DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a plasma deposition device capable of reducing reaction byproducts generated in plasma film formation. SOLUTION: This plasma deposition device 1 is provided with a reaction chamber 2, a coil 12, an AC power source 14 and an electromagnetic device 11. The electromagnetic device 11 can be a transformer provided with a primary side connected to the coil, a secondary side connected to the AC power source and an intermediate terminal provided on the primary side. A gas supply means is provided so as to supply process gas for deposition into the reaction chamber. The coil is wound around the reaction chamber once or more, and the AC power source provides the coil 12 with power for generating the plasma of the process gas. The intermediate terminal is connected to a reference potential line. The voltage of one end and the other end of the coil is vibrated corresponding to the power supplied from the AC power source with the potential supplied to the intermediate terminal as a center.
申请公布号 JP2002151491(A) 申请公布日期 2002.05.24
申请号 JP20000333657 申请日期 2000.10.31
申请人 APPLIED MATERIALS INC 发明人 IWATA HIDEYUKI
分类号 H05H1/46;C23C16/42;C23C16/507;H01L21/302;H01L21/3065;H01L21/31;H01L21/316 主分类号 H05H1/46
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