SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which has no distortion or defect such as lattice mismatch or crystal dislocation when crystal growth is made on a substrate, and also to provide a method for manufacturing the semiconductor device. SOLUTION: A crystal of material of the same type (GaAs) as a GaAs substrate or of a different type therefrom is grown on the substrate (a), a substrate (Si substrate) of material different from the above substrate is wafer-bonded onto a crystalline thin film crystal-grown on the GaAs substrate (b), only the GaAs substrate part is released (lifted off) while leaving only the crystalline thin film part on the Si substrate (c), and a semiconductor crystal of material of the same type (GaAs) or different type is grown on the lifted-off crystal thin film (d).