| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for correcting an electron beam for correcting the irradiating position of the electron beam, except the prescribed electron beam by detecting the irradiating position of the prescribed beam, and to provide an electron beam exposure system. SOLUTION: The electron beam exposure system for exposing a wafer with the electron beam comprises a wafer stage for mounting the wafer, a first electron beam generator for generating an exposure electron beam to irradiate the wafer, a mark section provided on a region except the region to be mounted with the wafer on the wafer stage, and a second electron beam generator for generating a detecting electron beam for irradiating the mark section, to detect the irradiating position of the exposure electron beam. |
