| 摘要 |
PROBLEM TO BE SOLVED: To enable performing write-in, verifying, or the like for a storage element storing trimming information, replacement information, or the like without providing an exclusive circuit, in a non-volatile semiconductor memory in which electrical write-in and erasure can be performed like a flash memory. SOLUTION: In a non-volatile semiconductor memory consisting of plural memory cells varying threshold voltage by applying the prescribed voltage to a selected memory cell and storing information by difference of threshold voltage, and provided with a memory array in which one part of memory cells are made spare memory cells, the device is provided with a latch circuit (LT) connected to a bit line (MB) of the memory array (11) through a transmission switch (Qti), the memory array can store replacement information for replacing a defective bit by the spare memory cell, and replacement information is transferred to the latch circuit from the memory array through the transmission switch and held. |
