| 摘要 |
PROBLEM TO BE SOLVED: To provide substrate processing method and device capable of smoothly and surely executing the processing of a substrate, dissolving a first wafer effect of a conventional problem at the time of successively processing a plurality of the substrates by the same device, and evading the decline of an yield and the increase of costs in the processing of the substrate. SOLUTION: In this substrate processing method, the microwaves of output 500 W are generated from the microwave generater 36 of an active seed supply 30 provided in an RPN device 100 first. Thus, an applicator 31 is preliminarily heated. Then, an Si wafer Wa is housed inside a chamber 2, a gaseous starting material Gr containing N2 gas is supplied into the applicator 31, and the microwaves of output 3 kW are generated from the microwave generater 36. Since the applicator 31 is already preliminarily heated, plasmas are surely formed. As a result, nitrogen active seeds generated from the gaseous starting material Gr are supplied onto the Si wafer Wa inside the chamber 2 for prescribed time and nitriding is effectively executed.
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