| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is constituted in an embedded channel region type transistor that is normally not turned on and has a high hot carrier resistance, a high punch through resistance, or high channel mobility, by optimizing the structure of a buried channel type MIS transistor using a silicon carbide substrate or the plane orientation of the substrate. SOLUTION: In the MIS transistor, using the P-type silicon carbide semiconductor substrate, an embedded channel area is formed. In order to obtain high mobility, by optimizing the formed depth of the buried channel area, the ratio (Lbc÷Xj) of the junction depth (Lbc) of the buried channel area to the junction depth (Xj) of source and drain areas is adjusted to be 0.2-1.0. In addition, the MIS transistor is formed on the (1,1,-2,0) face of hexagonal or rhombohedral silicon carbide.
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