发明名称 INDUCTIVE COUPLED PLASMA APPARATUS
摘要 PURPOSE: An inductive coupled plasma apparatus is provided to reduce absorption of byproducts functioning as a source of generating undesired particles, by heating parts inside a chamber like a gas distribution plate or the wall of the chamber to 200 deg.C. CONSTITUTION: The chamber(110) forms a closed space. An antenna plate(120) is installed to horizontally divide the closed space. The gas distribution plate(130) is installed horizontally divide the space under the antennal plate, having a plurality of spraying holes. A reaction gas injecting hole is formed in a space between the antennal plate and the gas distribution plate so that reaction gas is sprayed to the space under the gas distribution plate through the spraying holes of the gas distribution plate. An exhaust hole(144) is installed to exhaust the reaction gas injected to the space under the gas distribution plate. A radio frequency(RF) antenna(125) is installed on the antenna plate to generate plasma in the space under the gas distribution plate. A heater plate(140) horizontally divides a space over the antenna plate to heat the chamber, having a plurality of air holes. A heat transfer gas injecting hole(142) is formed in the space over the heater plate so that heat transfer gas is injected into a space between the heater plate and the antenna plate through the air hole of the heater plate. A heat transfer gas exhausting hole is installed to exhaust the heat transfer gas injected into a space between the heater plate and the antenna plate.
申请公布号 KR20020037802(A) 申请公布日期 2002.05.23
申请号 KR20000067701 申请日期 2000.11.15
申请人 JU SUNG ENGNEERING CO., LTD. 发明人 BYUN, HONG SIK;HAN, SUN SEOK;KIM, HONG SEUP;KWON, GI CHEONG;LEE, CHUNG WON;LEE, SEUNG WON
分类号 H01L21/3065;H01J37/32;(IPC1-7):H01L21/306 主分类号 H01L21/3065
代理机构 代理人
主权项
地址