发明名称 Half tone type phase shift mask blank manufacturing method for photolithography, involves implementing thermal treatment of translucent film at specified temperature
摘要 A thermal treatment of a translucent film is carried out at a 15 deg C after forming the translucent film on a transparent substrate. The translucent film has a thin film of nitrogen, metal and silicon as main components. Independent claims are included for the following: (1) Photo mask manufacturing method; (2) Pattern transcription method; (3) Mask blank; (4) Photo mask; (5) Method of manufacturing half tone type phase shaft mask; and (6) Half tone type shift mask.
申请公布号 DE10144894(A1) 申请公布日期 2002.05.23
申请号 DE2001144894 申请日期 2001.09.12
申请人 HOYA CORP., TOKIO/TOKYO 发明人 NOZAWA, OSAMU;MITSUI, MASARU;MITSUI, HIDEAKI
分类号 B32B17/06;C03C17/22;G03F1/32;G03F1/54;G03F1/68;H01L21/027 主分类号 B32B17/06
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