| 摘要 |
PURPOSE: A method for forming a silicon quantum dot is provided to form a high density silicon quantum dot, by forming an insulation layer by a vapor deposition method after amorphous silicon is seeded and by performing an oxidation process after the amorphous silicon is polished through a chemical mechanical polishing(CMP) process. CONSTITUTION: The first insulation layer is formed on a semiconductor substrate(31). A plurality of nano-crystalline silicon(33) are formed on the first insulation layer. The second insulation layer is formed on the first insulation layer including the nano-crystalline silicon. A part of the second insulation layer and the nano-crystalline silicon is etched. The surface of the nano-crystalline silicon is oxidized.
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