| 摘要 |
<p>A method for cleaning a processing chamber in a semiconductor processing apparatus, which comprises a halogenation treatment (S11) of feeding a treatment gas containing a halogenating gas into a processing chamber (2) and at the same time heating a member supporting a substrate to be processed (3), to thereby halogenate the metal elements in a by-produced film, a reduction treatment (S12) of feeding a treatment gas containing a reducing gas into the processing chamber (2), to thereby reduce the halogenated metal elements and liberate the metal elements, and then an oxidation treatment (S13) of feeding a treatment gas containing an oxidizing gas into the processing chamber (2) and at the same time heating a casing wall of the processing chamber (2), to thereby oxidize and passivate the liberated metal elements.</p> |
