WAFER INSPECTING METHOD, WAFER INSPECTING INSTRUMENT, AND ELECTRON BEAM APPARATUS

摘要

A wafer inspecting instrument for inspecting a pattern formed on a wafer by irradiating the wafer with a charged particle beams. The wafer inspecting instrument comprises a charged particle beam generating means, a primary optical system including a means for irradiating a multi-aperture plate having a plurality of apertures with a charged particle beam generated from the beam generating means and for focusing a plurality of charged particle beams having passed through the apertures in the wafer surface, a secondary optical system which secondary charged particle beams radiated from the wafer enter, an electron beam apparatus including a detection system for detecting the secondary charged particle beam to output an electric signal and a processing control system for processing and evaluating the electric signal, a stage apparatus for holding and moving the wafer, and a working chamber which can be controlled to a desired atmosphere.