| 发明名称 |
Method for fabricating a III nitride film |
| 摘要 |
A III nitride film including Al element is fabricated by a MOCVD method with monitoring the dew point of the reactor to be used in the MOCVD method. An organic metal vapor flown in the reactor, the dew point is preferably set to a temperature of -90° C. or below. Then, the film is fabricated.
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| 申请公布号 |
US2002061655(A1) |
申请公布日期 |
2002.05.23 |
| 申请号 |
US20010962921 |
申请日期 |
2001.09.25 |
| 申请人 |
NGK INSULATORS, LTD. |
发明人 |
SHIBATA TOMOHIKO;NAKAMURA YUKINORI;TANAKA MITSUHIRO |
| 分类号 |
C23C16/34;C23C16/52;C30B25/02;H01L21/205;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
C23C16/34 |
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