LOW TEMPERATURE CVD BST DEPOSITION

摘要

A process and apparatus is provided for the vaporization of liquid precursors and deposition of a layer at a temperature of less than or equal to about 480 DEG C on a suitable substrate. Particularly contemplated is a process for CVD deposition of a metal-oxide layer, such as a barium, strontium, titanium oxide (BST) layer, on a silicon substrate to make integrated circuit capacitors useful in high capacity dynamic memory modules. The process allows for depositing smooth, conformal BST layers having high dielectric constants and consistent layer compositions. In one aspect of the invention, a method is provided to deposit BST layers by introducing a precursor reactant gas comprising barium, strontium, and titanium, to a processing chamber, introducing an oxidizing gas to the processing chamber, and reacting the precursor reactant gas in the presence of the oxidizing gas at a substrate temperature of less than or equal to about 480 DEG C to deposit the oxide layer. The oxide layer may be further annealed to recrystallize the layer to improve dielectric properties and reduce leakage current.