This invention concerns the use of engineered deep-etch air/semiconductor Bragg reflector gratings in order to control the spectral and spatial emission in short-wavelength laser diodes. The technique consists of introducing a high-order deep-etch distributed reflector of controlled depth, pitch and position into the laser cavity, in order to selectively enhance the modal reflectivity of one, or a selected number, or lasing modes.
申请公布号
WO0241456(A2)
申请公布日期
2002.05.23
申请号
WO2001GB05033
申请日期
2001.11.15
申请人
UNIVERSITY OF BRISTOL;MARINELLI, CLAUDIO;RORISON, JUDY, MEGAN;SARGENT, LAURENCE;PENTY, RICHARD;BORDOVSKY, MICHAL;WHITE, IAN, HUGH