METHOD FOR FABRICATING HARD MASK OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a hard mask of a semiconductor device is provided to increase efficiency of the hard mask by obtaining a desired profile of the hard mask by a simple etch-back process or planarization process without tuning a complicated etch condition. CONSTITUTION: A conductive film to pattern is formed on a substrate(21). A photoresist pattern layer is formed on the conductive film. A material layer for forming the hard mask is formed on the entire surface of the conductive film including the photoresist pattern layer. A part of the material layer for forming the hard mask is removed to expose the upper surface of the photoresist pattern layer so that the hard mask is formed. The photoresist pattern layer is eliminated. The exposed conductive film is selectively etched to form a conductive pattern layer(22a) by using the hard mask.