发明名称 |
ELECTRON BEAM EXPOSURE SYSTEM, ELECTRON BEAM CORRECTION METHOD, ELECTRON BEAM EXPOSURE METHOD, AND METHOD OF PRODUCING SEMICONDUCTOR ELEMENT |
摘要 |
An electron beam exposure system for exposing wafers by electron beams, comprising a wafer-mounted wafer stage, a first electron beam generator for generating exposure electron beams to be applied onto wafers, a mark unit provided on an area other than a wafer-mounted area on the wafer stage, and a second electron beam generator for generating detection electron beams to be applied onto the mark unit. |
申请公布号 |
WO0241374(A1) |
申请公布日期 |
2002.05.23 |
申请号 |
WO2001JP09815 |
申请日期 |
2001.11.09 |
申请人 |
ADVANTEST CORPORATION;HAMAGUCHI, SHINICHI;YASUDA, HIROSHI |
发明人 |
HAMAGUCHI, SHINICHI;YASUDA, HIROSHI |
分类号 |
G03F7/20;H01J37/147;H01J37/20;H01J37/244;H01J37/304;H01J37/305;H01J37/317;H01L21/027 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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