发明名称 ELECTRON BEAM EXPOSURE SYSTEM, ELECTRON BEAM CORRECTION METHOD, ELECTRON BEAM EXPOSURE METHOD, AND METHOD OF PRODUCING SEMICONDUCTOR ELEMENT
摘要 An electron beam exposure system for exposing wafers by electron beams, comprising a wafer-mounted wafer stage, a first electron beam generator for generating exposure electron beams to be applied onto wafers, a mark unit provided on an area other than a wafer-mounted area on the wafer stage, and a second electron beam generator for generating detection electron beams to be applied onto the mark unit.
申请公布号 WO0241374(A1) 申请公布日期 2002.05.23
申请号 WO2001JP09815 申请日期 2001.11.09
申请人 ADVANTEST CORPORATION;HAMAGUCHI, SHINICHI;YASUDA, HIROSHI 发明人 HAMAGUCHI, SHINICHI;YASUDA, HIROSHI
分类号 G03F7/20;H01J37/147;H01J37/20;H01J37/244;H01J37/304;H01J37/305;H01J37/317;H01L21/027 主分类号 G03F7/20
代理机构 代理人
主权项
地址