| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and apparatus for depositing a zirconium nitride thin film having a specific resistance value close to that of the bulk material and usable, e.g. as a barrier film for preventing diffusion in an electronic device by a CVD process, and to provide a method and apparatus for forming copper wiring. SOLUTION: In the method and apparatus for producing a zirconium nitride thin film by a CVD process, tetrakisdialkylaminozirconium(TDAAZ) and a reaction gas (gaseous NH3) reacted therewith are fed into a reaction vessel. The total pressure (Pa) is controlled to 1 to 1,500. The flow rate (g/min) of the liquid TDAAZ is controlled to 0.001 to 0.1, the flow rate (l/min) of the gaseous NH3 is controlled to 0.1 to 5, the ratio of the flow rate (g/min) of the liquid TDAAZ to the flow rate (ml/min) of the gaseous NH3, i.e., TDAAZ/NH3 is controlled to 2×10-7<=TDAAZ/NH3 (g/ml) <=2×10-4, and the temperature ( deg.C) of a substrate is controlled to 300 to 450. In this way, the zirconium nitride thin film is produced on the surface of the substrate. The zirconium thin film produced thereby has a composition of, by molar ratio, zirconium: nitrogen is 1:1 to 1:1.25.
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