| 摘要 |
PURPOSE: To form contact holes in a self-aligned way simply between wiring layers, in a semiconductor device having a multilayer wiring. CONSTITUTION: In the semiconductor device, a first interlayer insulation film 3 is formed out of a first dielectric (e.g. silicon oxide film) on a diffusion layer 2 formed on the surface of a silicon substrate 1. Then, on the first insulation film 3, parallel first wirings 10 with each other are so provided that a nitride film mask 8 and sidewall nitride films 12 made of a second dielectric having a lower etching speed than the first dielectric are formed respectively on the top surface and the side surfaces of each first wiring 10. Subsequently, by dry etching using as its etching masks these nitride film masks 8 and sidewall nitride films 12, contact holes 15 are so passed through the first interlayer insulation film 3 that they reach the diffusion layer 2. |
