| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method in which a chemical amplification type photoresist and a treating agent are used, the influence of process environment, particularly a suspended base is reduced and a resist pattern having a good shape is formed and to provide the treating agent used in the method. SOLUTION: The resist pattern forming method includes a step for forming a chemical amplification type photoresist film on a substrate by coating, a step for applying an organic acid-containing treating agent of pH 1.3-4.5 on the photoresist film, a step for baking the photoresist film after at least one of the step for forming the photoresist film and the step for applying the treating agent, a step for selectively exposing the photoresist film, a step for subjecting the photoresist film to post-exposure baking and a step for developing the photoresist film. The angle of contact of the unexposed part with a developing solution after the treating agent on the chemical amplification type photoresist before development is washed and spin-dried is reduced by 10-110 deg. as compared with the case where the treating agent is not applied. |
