发明名称 |
PHOTO ACID GENERATOR, CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND METHOD FOR FORMING PATTERN FROM THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a photo acid generators which has excellent transparency for UV light having a wavelength of <=220 nm and a high photoreaction efficiency (photo acid generation efficiency), and to provide a chemical amplification resist composition which gives pattern sidewalls having excellent smoothness. SOLUTION: This photo acid generator characterized by comprising a sulfonium salt compound represented by general formula (I) and a sulfonium salt compound represented by general formula (II). |
申请公布号 |
JP2002146333(A) |
申请公布日期 |
2002.05.22 |
申请号 |
JP20000347900 |
申请日期 |
2000.11.15 |
申请人 |
NEC CORP |
发明人 |
MAEDA KATSUMI;IWASA SHIGEYUKI;NAKANO KAICHIRO;HASEGAWA ETSUO |
分类号 |
C07C381/12;C07D311/22;C07D333/46;C07D335/02;C08K5/36;C08L101/14;C09K3/00;G03F7/004;G03F7/038;G03F7/039;H01L21/027 |
主分类号 |
C07C381/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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