发明名称 PHOTO ACID GENERATOR, CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND METHOD FOR FORMING PATTERN FROM THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a photo acid generators which has excellent transparency for UV light having a wavelength of <=220 nm and a high photoreaction efficiency (photo acid generation efficiency), and to provide a chemical amplification resist composition which gives pattern sidewalls having excellent smoothness. SOLUTION: This photo acid generator characterized by comprising a sulfonium salt compound represented by general formula (I) and a sulfonium salt compound represented by general formula (II).
申请公布号 JP2002146333(A) 申请公布日期 2002.05.22
申请号 JP20000347900 申请日期 2000.11.15
申请人 NEC CORP 发明人 MAEDA KATSUMI;IWASA SHIGEYUKI;NAKANO KAICHIRO;HASEGAWA ETSUO
分类号 C07C381/12;C07D311/22;C07D333/46;C07D335/02;C08K5/36;C08L101/14;C09K3/00;G03F7/004;G03F7/038;G03F7/039;H01L21/027 主分类号 C07C381/12
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